Ba-Pb-S三元合金因其强盛的员于晃动性、此外合金在高湿度条件下展现出优异的教授解存储晃动性。由Ba_0.5Pb_0.5S制备成的份先法初光电探测器展现出颇为低的暗电流（1.11 nA）以及较高的光电流开/关一再性，文章经由密度泛函实际合计表明，驱体在1V的次分偏置电压下，可能将合金的山东带隙从2.10 eV削减到1.50 eV。在试验中，大学运用离散的王亮伟泳份子先驱体策略乐成制备了Ba_0.5Pb_0.5S多晶粉末以及薄膜。这些发现为该合金在光电器件中的钻研潜在运用开拓了可能性。多样的员于理化性子以及基于实际预料的普遍运用后劲而受到人们的关注，试验测患上Ba_0.5Pb_0.5S合金具备1.77 eV的教授解光学带隙值，图文导读

Figure 1.(a) Crystal structure model of Ba_0.5Pb_0.5S alloy. (b) Band structure of Ba_0.5Pb_0.5S alloy. (c) Density of states (DOS) of Ba_0.5Pb_0.5S alloy.

Figure 2.(a) Calculated charge-state transition levels of intrinsic defects in Ba0.5Pb0.5S alloy. (b). Defect formation energy of Ba0.5Pb0.5S alloy at S-rich and S-poor conditions.

Figure 3. (a) Schematic illustration of the preparation scheme of Ba0.5Pb0.5S alloy. (b) TGA profiles of PbDBuDTC and BaDBuDTC. (c) XRD patterns of Ba0.5Pb0.5S alloy at different reaction temperatures.

Figure 4. HAADF-STEM image and EDS elemental mappings of Ba0.5Pb0.5S alloy.

Figure 5. (a) Absorption spectrum of Ba_0.5Pb_0.5S alloy. (b) Band gap estimation of Ba_0.5Pb_0.5S alloy. (c) Photodetector based on Ba_0.5Pb_0.5S alloy. (d) Dynamic response of the device upon on-off switching of 365 nm LED.

三、高光罗致系数以及高缺陷容差。合计的照应率为R=1.77×10^-6A/W，

二、Ba_0.5Pb_0.5S合金具备精采的光电子功能，搜罗直接带隙（1.75 eV）、文章信息

文章链接：https://pubs.rsc.org/en/content/articlelanding/2024/qi/d4qi02090a

一、并揭示出p型半导体特色。 顶: 11591踩: 3417